ThuliumV1, Main, Exploration, bibRecord, 001076

Thermal reaction of SiC films with Mo, Re and Mo-Re alloy

Identifieur interne : 001076 ( Main/Exploration ); précédent : 001075; suivant : 001077

Thermal reaction of SiC films with Mo, Re and Mo-Re alloy

Auteurs : Jerome Roger [France] ; Fabienne Audubert [France] ; Yann Le Petitcorps [France]

Source :

Journal of alloys and compounds [ 0925-8388 ] ; 2009.

RBID : Pascal:09-0250260

Descripteurs français

Pascal (Inist)
- Couche mince, Réaction état solide, Recuit thermique, Revêtement, Dépôt chimique phase vapeur, Mélange gaz, Interface, Microscopie optique, Diffraction RX, Analyse microsonde électronique, Rhénium, Carbure de molybdène, Diffusion(transport), Cinétique, Carbure de silicium, Molybdène alliage, Fil métallique, Sulfure de thulium, Siliciure, Epaisseur, Energie activation, SiC, Substrat métal, S Tm, TmS, Substrat SiC, 66.

English descriptors

KwdEn :
- Activation energy, CVD, Coatings, Diffusion, Electron microprobe analysis, Gas mixtures, Interfaces, Kinetics, Molybdenum alloys, Molybdenum carbide, Optical microscopy, Rhenium, Silicides, Silicon carbide, Solid state reaction, Thermal annealing, Thickness, Thin films, Thulium sulfides, Wire, XRD.

Abstract

Solid-state reactions between SiC films and pure Mo or Re metal substrates on thermal annealing between 1373 and 1873 K for various durations have been investigated. The behaviour of Mo-47.5Re/SiC couple was also examined to establish the effect of the mix on stability. SiC coatings were deposited on metallic wires by hot filament rapid chemical vapour deposition from a gas mixture of tetramethylsilane (TMS) and hydrogen at 1373 K under normal pressure. The interface zones were characterized using optical microscopy. X-ray diffraction, and electron probe microanalysis. All analyses reveal that SiC reacts with substrates. The formation of a rhenium silicide was established on pure Re whereas a carbide and a silicon carbide containing molybdenum were formed on pure Mo. The diffusion kinetics were established from the thicknesses of reaction zones as a function of annealing durations. The outstanding fact of this work was the higher degree of reactivity observed on Mo-47.5Re alloy in comparison with pure Mo or Re as if there is a synergic effect. The apparent activation energy determined on pure Mo, pure Re and Mo-47.5Re substrates are equal to 64,99 and 74 kcal mol^-1, respectively.

Affiliations:

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Le document en format XML

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<term>Diffusion</term>
<term>Electron microprobe analysis</term>
<term>Gas mixtures</term>
<term>Interfaces</term>
<term>Kinetics</term>
<term>Molybdenum alloys</term>
<term>Molybdenum carbide</term>
<term>Optical microscopy</term>
<term>Rhenium</term>
<term>Silicides</term>
<term>Silicon carbide</term>
<term>Solid state reaction</term>
<term>Thermal annealing</term>
<term>Thickness</term>
<term>Thin films</term>
<term>Thulium sulfides</term>
<term>Wire</term>
<term>XRD</term>
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<keywords scheme="Pascal" xml:lang="fr"><term>Couche mince</term>
<term>Réaction état solide</term>
<term>Recuit thermique</term>
<term>Revêtement</term>
<term>Dépôt chimique phase vapeur</term>
<term>Mélange gaz</term>
<term>Interface</term>
<term>Microscopie optique</term>
<term>Diffraction RX</term>
<term>Analyse microsonde électronique</term>
<term>Rhénium</term>
<term>Carbure de molybdène</term>
<term>Diffusion(transport)</term>
<term>Cinétique</term>
<term>Carbure de silicium</term>
<term>Molybdène alliage</term>
<term>Fil métallique</term>
<term>Sulfure de thulium</term>
<term>Siliciure</term>
<term>Epaisseur</term>
<term>Energie activation</term>
<term>SiC</term>
<term>Substrat métal</term>
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<front><div type="abstract" xml:lang="en">Solid-state reactions between SiC films and pure Mo or Re metal substrates on thermal annealing between 1373 and 1873 K for various durations have been investigated. The behaviour of Mo-47.5Re/SiC couple was also examined to establish the effect of the mix on stability. SiC coatings were deposited on metallic wires by hot filament rapid chemical vapour deposition from a gas mixture of tetramethylsilane (TMS) and hydrogen at 1373 K under normal pressure. The interface zones were characterized using optical microscopy. X-ray diffraction, and electron probe microanalysis. All analyses reveal that SiC reacts with substrates. The formation of a rhenium silicide was established on pure Re whereas a carbide and a silicon carbide containing molybdenum were formed on pure Mo. The diffusion kinetics were established from the thicknesses of reaction zones as a function of annealing durations. The outstanding fact of this work was the higher degree of reactivity observed on Mo-47.5Re alloy in comparison with pure Mo or Re as if there is a synergic effect. The apparent activation energy determined on pure Mo, pure Re and Mo-47.5Re substrates are equal to 64,99 and 74 kcal mol<sup>-1</sup>
, respectively.</div>
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Thermal reaction of SiC films with Mo, Re and Mo-Re alloy

Thermal reaction of SiC films with Mo, Re and Mo-Re alloy

Source :

Descripteurs français

English descriptors

Abstract

Links toward previous steps (curation, corpus...)

Le document en format XML

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Pour mettre un lien sur cette page dans le réseau Wicri